| Demanda: Solar Cell Grade Single Crystal Silicon ngot |
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| 2008-03-14 19:47 Escritorio Economico e Comercial do Consulado Geral da China no Rio de Janeiro |
Growth Method: CZ Diameter: 138mm min;153mm min;206mm min.
Type: P Dopant: Born
Orientation: <100> Off Orientation: <+/- 3°
Resistivity: 0.5-2Ωcm / 3-6Ω cm
Minority Carrier Lifetime: >10 us
Oxygen Content: 1.0 * 1018 at/cm3 min
Carbon Content: 5.0 * 1016 at/cm3 min
Dislocation Density: 100/cm2 min ; 3000/cm2 min ; 3000/cm2max
Nomol Ingot Lenth: 470mm/400mm/295mm
Min. Ingot Lenth: 100mm max
Contato: riodejaneiro@mofcom.gov.cn
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Intercâmbio Bilateral